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Research Article
Performance Analysis of Drain with Extraordinary Electron Mobility Transistors
K.Pooncholai1
G.Anuradha2
S.Janaki3
1,2,3 Dept. of ECE, vinayakamissionskirupananda variyar engineering college, Tamilnadu.
Published Online: July-August 2021
Pages: 13-15
Cite this article
No DOIReferences
1. Mimura, Takashi; Hiyamizu, Satoshi; Fujii, Toshio; Nanbu, Kazuo” ANewField-EffectTransistorwithSelectivelyDopedGaAs/n-
AlxGa1-xAs Heterojunctions” , Journal of Applied Physics,Volume19,Issue5,pp.L225-L227(1980)..
2. R. Ross, S. Svensson, and P. Lugli, Pseudomorphic HEMT TechnologyandApplications.Dordrecht-Boston-
London:KluwerAcademicPublisher, 1996.
3. Takashi Mimura, Fellow, IEEE Early History of the High ElectronMobility Transistor (HEMT) IEEE Transactions on Microwave
Theoryand Techniques,vol.50,no.3,march2002.
4. J. Orton, The Story of Semiconductors. Oxford: Oxford UniversityPress,2004.
5. K. Duh, C. Chao, P. Ho, A. Tessmer, J. Liu, Y. Kao, M. Smith, and M.Ballingall,``W-
BandInGaAsHEMTLowNoiseAmplifiers,''IEEEIntl.MicrowaveSymp.Dig.,vol.1,pp.595-598,1990.
AlxGa1-xAs Heterojunctions” , Journal of Applied Physics,Volume19,Issue5,pp.L225-L227(1980)..
2. R. Ross, S. Svensson, and P. Lugli, Pseudomorphic HEMT TechnologyandApplications.Dordrecht-Boston-
London:KluwerAcademicPublisher, 1996.
3. Takashi Mimura, Fellow, IEEE Early History of the High ElectronMobility Transistor (HEMT) IEEE Transactions on Microwave
Theoryand Techniques,vol.50,no.3,march2002.
4. J. Orton, The Story of Semiconductors. Oxford: Oxford UniversityPress,2004.
5. K. Duh, C. Chao, P. Ho, A. Tessmer, J. Liu, Y. Kao, M. Smith, and M.Ballingall,``W-
BandInGaAsHEMTLowNoiseAmplifiers,''IEEEIntl.MicrowaveSymp.Dig.,vol.1,pp.595-598,1990.
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