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This research investigates the voltage-current (V-I) characteristics of three distinct memristor models, each representing a unique composition and behaviour. The model, denoted as TiN-TiOx-HfOx-Pt-Bilayered Memristor model, is a compact representation designed for Metal–Oxide Resistive Random Access Memory (RRAM). Matlab tool is used for the simulation to analyse V-I characteristics of Memristor. Through comprehensive analysis and simulations, we aim to provide a detailed insight into the intrinsic behaviours of the memristor models. Understanding the V-I characteristics of these models is crucial for their potential applications in emerging memory technologies. This Study elaborate the mathematical modelling of memristor with the outcome untuned V-I Characteristics - DC Switching characteristics. The findings contribute to the broader field of memristor research, fostering advancements in electronic memory devices and computational systems.